PART |
Description |
Maker |
K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N2632 |
128Mbit GDDR2 SDRAM
|
Samsung Electronic
|
K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163Q |
256Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns 128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
V54C3128404VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic Corp
|
V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
V54C3128164VS V54C3128164VT |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
|
Mosel Vitelic, Corp
|
K4S280432M-TC_L80 K4S280432M K4S280432M-TC_L10 K4S |
MC 7P MR 16/1 PVC GOLD RoHS Compliant: Yes 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|
HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC 4 Banks X 8M X 8Bit Synchronous DRAM SDRAM - 256Mb
|
Hynix Semiconductor
|
W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM Low Power SDRAM Industrial SDRAM 2M x 4 BANKS x 16 BIT SDRAM DRAM - Datasheet Reference
|
Winbond Electronics Corp WINBOND[Winbond]
|